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|Title:||Direct formation of C54 phase on the basis of C40 TiSi2 and its applications in deep sub-micron technology|
|Citation:||Chen, S.Y.,Shen, Z.X.,Xu, S.Y.,See, A.K.,Chan, L.H.,Li, W.S. (2001). Direct formation of C54 phase on the basis of C40 TiSi2 and its applications in deep sub-micron technology. Materials Research Society Symposium - Proceedings 670 : K641-K646. ScholarBank@NUS Repository.|
|Abstract:||A simple and novel salicidation process applying pulsed laser annealing as the first annealing step was used to induce TiSi2 formation. Both Raman spectroscopy and transmission electron microscope results confirm the formation of a new phase of Ti disilicide, the pure C40 TiSi2 after laser irradiation. Direct C54 phase growth on the basis of C40 template bypassing the C49 phase is accomplished at the second annealing temperature as low as 600°C. Line width independent formation of the C54 phase was observed on patterned wafers using this salicidation process and "fine line effect" is thus eliminated.|
|Source Title:||Materials Research Society Symposium - Proceedings|
|Appears in Collections:||Staff Publications|
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