Please use this identifier to cite or link to this item: https://doi.org/10.1016/S1369-8001(02)00056-2
Title: Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition
Authors: Feng, Z.C.
Yang, T.R.
Liu, R. 
Wee, T.S.A. 
Keywords: InGaN
MOCVD
Phase separation
Issue Date: Feb-2002
Citation: Feng, Z.C., Yang, T.R., Liu, R., Wee, T.S.A. (2002-02). Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor deposition. Materials Science in Semiconductor Processing 5 (1) : 39-43. ScholarBank@NUS Repository. https://doi.org/10.1016/S1369-8001(02)00056-2
Abstract: Zn-doped InGaN thin films were deposited on GaN/sapphire by metalorganic chemical vapor deposition, and studied by a combination of high-resolution X-ray diffraction (HR-XRD), micro-photoluminescence (PL) and secondary ion mass spectrometry (SIMS). Indium phase separation is studied comparatively. HR-XRD exhibits a GaN band and a single band from InGaN for samples without phase separation, but two InGaN bands corresponding to different x(In) for samples with phase separation. PL excitation power dependence measurements reveal 2 sets of InGaN PL emissions for samples with phase separation, but only 1 set for samples without phase separation. SIMS data showed that phase separated InGaN:Zn films possess a high Zn concentration near the InGaN-GaN interface and non-uniform distributions of In and Zn contents, which are in contrast with data from InGaN:Zn films with no In-phase separation. © 2002 Elsevier Science Ltd. All rights reserved.
Source Title: Materials Science in Semiconductor Processing
URI: http://scholarbank.nus.edu.sg/handle/10635/113096
ISSN: 13698001
DOI: 10.1016/S1369-8001(02)00056-2
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