Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.surfcoat.2004.10.114
Title: High-resolution synchrotron X-ray reflectivity study of the density of plasma-treated ultra low-k films
Authors: Yang, P. 
Lu, D.
Murthy, B.R.
Moser, H.O. 
Keywords: [B]Atomic force microscopy (AFM)
[B]interferometry
[B]roughness
[X]X-ray reflectivity
Issue Date: 1-Aug-2005
Citation: Yang, P., Lu, D., Murthy, B.R., Moser, H.O. (2005-08-01). High-resolution synchrotron X-ray reflectivity study of the density of plasma-treated ultra low-k films. Surface and Coatings Technology 198 (1-3 SPEC. ISS.) : 133-137. ScholarBank@NUS Repository. https://doi.org/10.1016/j.surfcoat.2004.10.114
Abstract: The density changes of porous SiLK (p-SiLK) organic dielectric films were studied by X-ray reflectivity technique. Blanket films on Si were studied under different plasma etch conditions, that are conventionally used in the etch processes of interconnects. X-ray reflectivity measurements were performed using a high-resolution Huber diffractometer and monochromatic 8.048 keV photons at the Singapore Synchrotron Light Source (SSLS). The results show that un-treated (as-grown) films are of good quality in terms of surface and interface roughness. All of the plasma-treated films keep their density (within 1-3% error), whereas the surface roughness increases and layer thickness decreases accordingly. The surface roughness is severely increased by oxidation for oxygen plasma-treated samples. © 2004 Elsevier B.V. All rights reserved.
Source Title: Surface and Coatings Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/113020
ISSN: 02578972
DOI: 10.1016/j.surfcoat.2004.10.114
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