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|Title:||Proton beam writing: A platform technology for nanowire production|
|Authors:||Van Kan, J.A. |
|Citation:||Van Kan, J.A., Zhang, F., Chiam, S.Y., Osipowicz, T., Bettiol, A.A., Watt, F. (2008-10). Proton beam writing: A platform technology for nanowire production. Microsystem Technologies 14 (9-11) : 1343-1348. ScholarBank@NUS Repository. https://doi.org/10.1007/s00542-007-0514-y|
|Abstract:||P-beam writing (proton beam writing) is a unique direct write 3D nano-lithographic technique which has been developed at the Centre for Ion Beam Applications (CIBA), in the Physics Department of the National University of Singapore. This technique employs a focused MeV proton beam which is scanned in a predetermined pattern over a resist (e.g. PMMA, SU-8 or HSQ), which is subsequently chemically developed. In e-beam writing as well as p-beam writing the energy loss of the primary beam is dominated by energy transfer to substrate electrons. Unlike the high energy secondary electrons generated during e-beam writing the secondary electrons induced by the primary proton beam have low energies (typically less than 100 eV) and therefore a limited range, resulting in minimal proximity effects. The low proximity effects exhibited by p-beam writing coupled with the straight trajectory and high penetration of the proton beam enables the production of high aspect ratio, high density 3D micro- and nano-structures with well defined smooth side walls to be directly written into resist materials. These structures can be used as templates to electroplate metallic nanowires. © 2008 Springer-Verlag.|
|Source Title:||Microsystem Technologies|
|Appears in Collections:||Staff Publications|
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