Please use this identifier to cite or link to this item: https://doi.org/10.1021/jp8040007
Title: Low-temperature scanning tunneling microscopy investigation of epitaxial growth of F16CuPc thin films on Ag(111)
Authors: Huang, H. 
Chen, W. 
Wee, A.T.S. 
Issue Date: 25-Sep-2008
Citation: Huang, H., Chen, W., Wee, A.T.S. (2008-09-25). Low-temperature scanning tunneling microscopy investigation of epitaxial growth of F16CuPc thin films on Ag(111). Journal of Physical Chemistry C 112 (38) : 14913-14918. ScholarBank@NUS Repository. https://doi.org/10.1021/jp8040007
Abstract: In-situ low-temperature scanning tunneling microscopy (LT-STM) has been used to systematically investigate the epitaxial growth behaviors of copper hexadecafluorophthalocyanine (F16CuPc) on Ag(111) from one monolayer to a few layers. At the monolayer regime, alternately arranged double-molecular-rows of F16CuPc form along the [11̄0] direction of Ag(111). Within the same double-molecular-row, all F16CuPc molecules possess the same in-plane orientation. The growth in the second layer shows strong coverage dependence. At the initial growth stages of the second layer, isolated and rotated F16CuPc molecules pack along the [11̄0] direction forming molecular dot-chains. Increasing the coverage leads to the appearance of densely packed and uniaxially oriented molecular nanoribbons comprising a few F16CuPc molecular rows packed exclusively along the [11̄0] direction; this transits to a densely packed layer with all molecules having the same in-plane orientation. The growth of the third layer starts with the formation of densely packed molecular nanoribbons oriented along the [11̄0] direction. Our results reveal that the growth of F16CuPc on Ag(111) adopts a layer-by-layer growm mode via π-π stacking with their molecular π-plane oriented parallel to me substrate surface, stabilized through the interlayer dispersion forces. © 2008 American Chemical Society.
Source Title: Journal of Physical Chemistry C
URI: http://scholarbank.nus.edu.sg/handle/10635/112612
ISSN: 19327447
DOI: 10.1021/jp8040007
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