Please use this identifier to cite or link to this item:
|Title:||Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam|
|Authors:||Xie, X.N. |
|Citation:||Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2005-05-09). Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam. Applied Physics Letters 86 (19) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1901814|
|Abstract:||We report a comparative study on the chemical and dielectrical properties of ultrathin oxides grown by atomic force microscopy (AFM) and scanning electron beam (SEB) techniques. Oxide grown by AFM (AFM oxide) shows preferential etching as compared to oxide grown by SEB (SEB oxide). The structural and chemical features of these oxides were probed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) time profiling. It was found that AFM oxide is richer in Si-H and Si-OH content, while SEB oxide is oxygen rich and relatively dense in structure. The dielectric strength of AFM and SEB oxides were further evaluated by conducting AFM (c-AFM). The current-voltage characteristics and dielectric breakdown probability of these oxides were compared. The correlation between Si-H and Si-OH site formation and its impact on the chemical and dielectrical stability of AFM and SEB oxides was discussed. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 21, 2019
WEB OF SCIENCETM
checked on Feb 13, 2019
checked on Jan 25, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.