Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1901814
Title: Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam
Authors: Xie, X.N. 
Chung, H.J.
Sow, C.H.
Wee, A.T.S. 
Issue Date: 9-May-2005
Citation: Xie, X.N., Chung, H.J., Sow, C.H., Wee, A.T.S. (2005-05-09). Chemical and dielectrical characteristics of ultrathin oxides grown by atomic force microscopy and scanning electron beam. Applied Physics Letters 86 (19) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1901814
Abstract: We report a comparative study on the chemical and dielectrical properties of ultrathin oxides grown by atomic force microscopy (AFM) and scanning electron beam (SEB) techniques. Oxide grown by AFM (AFM oxide) shows preferential etching as compared to oxide grown by SEB (SEB oxide). The structural and chemical features of these oxides were probed using time-of-flight secondary ion mass spectrometry (TOF-SIMS) time profiling. It was found that AFM oxide is richer in Si-H and Si-OH content, while SEB oxide is oxygen rich and relatively dense in structure. The dielectric strength of AFM and SEB oxides were further evaluated by conducting AFM (c-AFM). The current-voltage characteristics and dielectric breakdown probability of these oxides were compared. The correlation between Si-H and Si-OH site formation and its impact on the chemical and dielectrical stability of AFM and SEB oxides was discussed. © 2005 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/112582
ISSN: 00036951
DOI: 10.1063/1.1901814
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