Please use this identifier to cite or link to this item: https://doi.org/10.1140/epjd/e2010-00208-3
Title: Geometric phase gate with trapped ions in thermal motion by adiabatic passage
Authors: Zhang, X.L. 
Feng, X.L. 
Wu, C.F. 
Oh, C.H. 
Issue Date: Nov-2010
Citation: Zhang, X.L., Feng, X.L., Wu, C.F., Oh, C.H. (2010-11). Geometric phase gate with trapped ions in thermal motion by adiabatic passage. European Physical Journal D 60 (2) : 411-415. ScholarBank@NUS Repository. https://doi.org/10.1140/epjd/e2010-00208-3
Abstract: We propose a scheme for implementing two-qubit geometric phase gate via the adiabatic evolution for trapped ions in thermal motion, leveraging on the stimulated Raman adiabatic passage with the geometric phase mechanism. Evolution along a dark state makes our scheme not only immune from decoherence due to spontaneous emission from excited states, but also rid off the dynamical phase. Furthermore, due to the opposite detuning of the driving lasers, the vibrational states of the trapped ions are only virtually excited during the operations, so our scheme is also insensitive to the occupation number of the vibrational mode. © 2010 EDP Sciences, SIF, Springer-Verlag Berlin Heidelberg.
Source Title: European Physical Journal D
URI: http://scholarbank.nus.edu.sg/handle/10635/112445
ISSN: 14346060
DOI: 10.1140/epjd/e2010-00208-3
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