Please use this identifier to cite or link to this item: https://doi.org/10.1002/mop.1245
Title: Frequency-dependent behavior of optically illuminated HEMT
Authors: Yajian, H.
Alphones, A. 
Keywords: HEMT
Light modulation
Photoconductive
Photovoltaic
Issue Date: 20-Jul-2001
Citation: Yajian, H.,Alphones, A. (2001-07-20). Frequency-dependent behavior of optically illuminated HEMT. Microwave and Optical Technology Letters 30 (2) : 138-142. ScholarBank@NUS Repository. https://doi.org/10.1002/mop.1245
Abstract: An analysis of the ac characteristics of an AlGaAs / GaAs HEMT under illumination with modulated light has been carried out for a small-signal condition. A new model for the photovoltage calculation is outlined. The effect of the signal frequency on the photoconductive current is evaluated; the results show that the photoconductive current is very small, and can be neglected in the calculation. The frequency dependence of the photovoltage along with the 2-DEG charge density, drain-source current and transconductance of the device have been studied analytically for an HEMI structure. © 2001 John Wiley & Sons. Inc.
Source Title: Microwave and Optical Technology Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/112251
ISSN: 08952477
DOI: 10.1002/mop.1245
Appears in Collections:Staff Publications

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