Interface controlled nanowire and two-dimensional thin film devices

Abstract

In this thesis, we demonstrate the experimental investigations for the surface/interface functionalization on nanowire and two-dimensional (2D) thin film devices. The nanostructures were configured as field effect transistors (FET) through sophisticated lithography techniques. In situ electrical transport characterization integrated with molecular beam epitaxy (MBE) technique served as the main probe to explore the modification effect of surface overlayers on tuning the electronic properties of nanowire and thin film based devices. In the first part of this thesis, a high work function transition metal oxide, molybdenum trioxide (MoO3), was utilized to non-destructively surface transfer dope graphene devices. In the second part of the thesis, the surface modification effect on zinc oxide nanostructures was investigated. MoO3 and 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HATCN) were employed as surface modification layers to effectively tune the electronic properties of ZnO nanowire based FET devices.