Please use this identifier to cite or link to this item:
|Title:||Surface stability and evolution of biaxially strained epitaxial thin films|
|Source:||Zhang, Y.W. (2005-09-19). Surface stability and evolution of biaxially strained epitaxial thin films. Applied Physics Letters 87 (12) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2053367|
|Abstract:||First-order perturbation analysis has been performed to investigate the stability and the fastest growth mode of a biaxially strained epitaxial thin film surface by stress-induced surface diffusion. It is found that the normalized critical wavelength along one principal direction depends on the Poisson's ratio of the film, and also the perturbed wavelength and stress level along the other principal direction. The fastest growth analysis shows that when the absolute value of the ratio of the two principal stresses deviates from unity, a gradual transition from nanoisland formation to nanowire formation occurs. The larger the deviation, the stronger the tendency for the formation of a nanowire; finite element simulations confirm the tendency. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 22, 2018
WEB OF SCIENCETM
checked on Jan 23, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.