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|Title:||Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition|
|Citation:||Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T. (2002-11-25). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition. Applied Physics Letters 81 (22) : 4218-4220. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1522826|
|Abstract:||For Hf-based gate dielectrics and the improved thermal stability of the amorphous films were demonstrated through the controlled addition of Al2O3 using atomic layer deposition. By a suitable choice of the ratio between Al and Hf precursor pulses, the Hf-based films exhibited excellent control over a wide range of composition. It was shown that after spike anneal, the Hf based films with Hf:Al∼1:3 (75% Al) remained amorphous after 1050 °C and those with Hf:Al∼3:1 (25% Al) remained amorphous upto 900 °C.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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