Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1522826
Title: Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition
Authors: Ho, M.-Y.
Gong, H. 
Wilk, G.D.
Busch, B.W.
Green, M.L.
Lin, W.H.
See, A.
Lahiri, S.K.
Loomans, M.E.
Räisänen, P.I.
Gustafsson, T.
Issue Date: 25-Nov-2002
Citation: Ho, M.-Y., Gong, H., Wilk, G.D., Busch, B.W., Green, M.L., Lin, W.H., See, A., Lahiri, S.K., Loomans, M.E., Räisänen, P.I., Gustafsson, T. (2002-11-25). Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition. Applied Physics Letters 81 (22) : 4218-4220. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1522826
Abstract: For Hf-based gate dielectrics and the improved thermal stability of the amorphous films were demonstrated through the controlled addition of Al2O3 using atomic layer deposition. By a suitable choice of the ratio between Al and Hf precursor pulses, the Hf-based films exhibited excellent control over a wide range of composition. It was shown that after spike anneal, the Hf based films with Hf:Al∼1:3 (75% Al) remained amorphous after 1050 °C and those with Hf:Al∼3:1 (25% Al) remained amorphous upto 900 °C.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107219
ISSN: 00036951
DOI: 10.1063/1.1522826
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