Please use this identifier to cite or link to this item: https://doi.org/10.1103/PhysRevB.71.045406
Title: Strain energy of nanoislands on strained film-substrate systems
Authors: Chiu, C.-H. 
Poh, C.T.
Issue Date: Jan-2005
Source: Chiu, C.-H., Poh, C.T. (2005-01). Strain energy of nanoislands on strained film-substrate systems. Physical Review B - Condensed Matter and Materials Physics 71 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.71.045406
Abstract: In this paper, we introduce a formula for estimating the strain energy change during the formation of three-dimensional facet islands on strained film-substrate systems. Our approach utilizes the boundary perturbation method to achieve results accurate to the first order of the island slope, ignoring the weak singularity at the edge of the islands. The formula is consistent with the methods in the literature for three-dimensional cases. The key advantage of the formula is its numerical efficiency. The formula requires only one area integration in order to obtain the strain energy change, in contrast to the four-dimensional integration in the existing method. As examples, our method is applied to study the equilibrium morphology of truncated hut islands and the island shape transition from a pyramid to a transitional pyramid. ©2005 The American Physical Society.
Source Title: Physical Review B - Condensed Matter and Materials Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/107199
ISSN: 10980121
DOI: 10.1103/PhysRevB.71.045406
Appears in Collections:Staff Publications

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