Please use this identifier to cite or link to this item: https://doi.org/10.1016/S0022-0248(99)00563-1
Title: RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; A two-site exchange model with growth rate dependence
Authors: Tok, E.S. 
Woods, N.J.
Zhang, J.
Issue Date: Feb-2000
Citation: Tok, E.S., Woods, N.J., Zhang, J. (2000-02). RHEED and SIMS studies of germanium segregation during growth of SiGe/Si heterostructures; A two-site exchange model with growth rate dependence. Journal of Crystal Growth 209 (2-3) : 321-326. ScholarBank@NUS Repository. https://doi.org/10.1016/S0022-0248(99)00563-1
Abstract: Segregation of Ge during the formation of SiGe/Si heterojunctions in thin film epitaxial growth is perhaps the largest obstacle to the formation of the desirable atomically sharp interfaces in device structures. This process has been studied experimentally using reflection high-energy electron diffraction (RHEED), secondary ion mass spectrometry (SIMS) and numerically using a two-site exchange model. In this paper, the current two-site exchange model is modified to incorporate the growth process explicitly in the rate equation. This allows the extraction of analytical solutions in the dilute regime and provides a better insight into the influence of temperature and other parameters on the eventual composition profiles across the Si/SiGe heterojunction. Using numerical methods, the rate equation is solved for practical conditions and compared with experimental measurements by RHEED and SIMS. The dependence of composition profiles on the growth rate is demonstrated by the model and good agreements with experimental data without modifying the Gibbs energy of segregation.
Source Title: Journal of Crystal Growth
URI: http://scholarbank.nus.edu.sg/handle/10635/107183
ISSN: 00220248
DOI: 10.1016/S0022-0248(99)00563-1
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