Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/107138
Title: Nanocrystalline p-type transparent Cu-Al-O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors
Authors: Gong, H. 
Wang, Y. 
Luo, Y.
Issue Date: 26-Jun-2000
Citation: Gong, H.,Wang, Y.,Luo, Y. (2000-06-26). Nanocrystalline p-type transparent Cu-Al-O semiconductor prepared by chemical-vapor deposition with Cu(acac)2 and Al(acac)3 precursors. Applied Physics Letters 76 (26) : 3959-3961. ScholarBank@NUS Repository.
Abstract: P-type transparent copper-aluminum-oxide semiconductor films are prepared by the use of the chemical-vapor deposition (CVD) technique with Cu(acac)2 and Al(acac)3 precursors. Transmission electron microscopy and electron diffraction suggest that the films contain nanocrystalline phases of CuAlO2 and Cu2O, in which CuAlO2 is dominant. Both Hall technique and Seebeck measurement reveal that the film is p type, and a very high room-temperature conductivity of 2 S cm-1 is achieved. This success of high-conductive p-type transparent semiconductor using CVD further paves the way for transparent semiconductor p-n junctions as well as industrial mass production of the relevant devices. The Hall measurement of the film shows a sheet mobility of 0.16 cm2V-1S-1 and a carrier concentration of 1.8×1019cm-3. A wide optical gap of 3.75 eV due to quantum confinement is found, and the activation energy for the positive holes is 0.12 eV. © 2000 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/107138
ISSN: 00036951
Appears in Collections:Staff Publications

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