Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1766096
Title: Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9) 2O9 thin films
Authors: Ezhilvalavan, S.
Samper, V.
Seng, T.W.
Junmin, X. 
Wang, J. 
Issue Date: 15-Aug-2004
Source: Ezhilvalavan, S., Samper, V., Seng, T.W., Junmin, X., Wang, J. (2004-08-15). Ferroelectric properties and leakage current characteristics of radio-frequency-sputtered SrBi2(V0.1Nb0.9) 2O9 thin films. Journal of Applied Physics 96 (4) : 2181-2185. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1766096
Abstract: The ferroelectric properties and leakage current mechanisms of polycrystalline SrBi2(V0.1Nb0.9) 2O9 (SBVN) thin films deposited on Pt/SiO2/n-Si substrate were investigated, using rf-magnetron sputtering and annealing in air. The SBVN films showed ferroelectric properties in terms of a large remnant polarization. The sputtered films exhibited a dense, crystallized microstructure, which had random orientations and smooth surface were also investigated. The results show that an improved ferroelectric and leakage current characteristics obtained at the low processing temperature are attributed to the larger polarizability.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/107044
ISSN: 00218979
DOI: 10.1063/1.1766096
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