Please use this identifier to cite or link to this item: https://doi.org/10.1080/10584580490459026
Title: Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications
Authors: Hu, X.B.
Garg, A.
Wang, J. 
Barber, Z.H.
Keywords: Bi4Ti3O12
Ferroelectric
Pulsed laser deposition (PLD)
Thin films
Issue Date: 2004
Citation: Hu, X.B., Garg, A., Wang, J., Barber, Z.H. (2004). Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications. Integrated Ferroelectrics 61 : 123-127. ScholarBank@NUS Repository. https://doi.org/10.1080/10584580490459026
Abstract: Ferroelectric Bi4-xSmxTiO12 (BSmT) thin films have been fabricated on Pt/TiOx/SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2Pr) was 17.5 μC/cm 2, 41.8 μC/cm2, 9.3 μC/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0 × 108 switching cycles.
Source Title: Integrated Ferroelectrics
URI: http://scholarbank.nus.edu.sg/handle/10635/107043
ISSN: 10584587
DOI: 10.1080/10584580490459026
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