Ferroelectric Bi4-xSmxTi3O12 thin films fabricated by pulsed laser deposition for Nv-RAM applications
Hu, X.B. Garg, A. Wang, J. Barber, Z.H.
Hu, X.B.
Garg, A.
Barber, Z.H.
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Abstract
Ferroelectric Bi4-xSmxTiO12 (BSmT) thin films have been fabricated on Pt/TiOx/SiO2/Si substrates by pulsed laser deposition (PLD) and their ferroelectric properties have been characterised. The remanent polarisation (2Pr) was 17.5 μC/cm 2, 41.8 μC/cm2, 9.3 μC/cm2, for x = 0.55, 0.70, and 1.00, respectively, at an applied maximum field of 450 kV/cm. The polarisation of the BSmT (x = 0.70) film decreased to 86% of the initial value after 5.0 × 108 switching cycles.
Keywords
Bi4Ti3O12, Ferroelectric, Pulsed laser deposition (PLD), Thin films
Source Title
Integrated Ferroelectrics
Publisher
Series/Report No.
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Date
2004
DOI
10.1080/10584580490459026
Type
Article