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|Title:||Elemental thin film depth profiles by ion beam analysis using simulated annealing - A new tool|
|Citation:||Jeynes, C., Barradas, N.P., Marriott, P.K., Boudreault, G., Jenkin, M., Wendler, E., Webb, R.P. (2003-04-07). Elemental thin film depth profiles by ion beam analysis using simulated annealing - A new tool. Journal of Physics D: Applied Physics 36 (7) : R97-R126. ScholarBank@NUS Repository. https://doi.org/10.1088/0022-3727/36/7/201|
|Abstract:||Rutherford backscattering spectrometry (RBS) and related techniques have long been used to determine the elemental depth profiles in films a few nanometres to a few microns thick. However, although obtaining spectra is very easy, solving the inverse problem of extracting the depth profiles from the spectra is not possible analytically except for special cases. It is because these special cases include important classes of samples, and because skilled analysts are adept at extracting useful qualitative information from the data, that ion beam analysis is still an important technique. We have recently solved this inverse problem using the simulated annealing algorithm. We have implemented the solution in the 'IBA DataFurnace' code, which has been developed into a very versatile and general new software tool that analysts can now use to rapidly extract quantitative accurate depth profiles from real samples on an industrial scale. We review the features, applicability and validation of this new code together with other approaches to handling IBA (ion beam analysis) data, with particular attention being given to determining both the absolute accuracy of the depth profiles and statistically accurate error estimates. We include examples of analyses using RBS, non-Rutherford elastic scattering, elastic recoil detection and non-resonant nuclear reactions. High depth resolution and the use of multiple techniques simultaneously are both discussed. There is usually systematic ambiguity in IBA data and Butler's example of ambiguity (1990 Nucl. Instrum. Methods B 45 160-5) is reanalysed. Analyses are shown: of evaporated, sputtered, oxidized, ion implanted, ion beam mixed and annealed materials; of semiconductors, optical and magnetic multilayers, superconductors, tribological films and metals; and of oxides on Si, mixed metal suicides, boron nitride, GaN, SiC, mixed metal oxides, YBCO and polymers.|
|Source Title:||Journal of Physics D: Applied Physics|
|Appears in Collections:||Staff Publications|
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